| PART |
Description |
Maker |
| 2SK3018 |
SOT-23 Plastic-Encapsulate MOSF ETS
|
TY Semiconductor Co., Ltd
|
| HAT2058R-EL-E HAT2058RJ-EL-E HAT2058R05 |
4 A, 100 V, 0.18 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon N Channel Power MOS FET High Speed Power Switching
|
Analog Devices, Inc.
Renesas Electronics Corporation
|
| HAT2028R-EL-E HAT2028RJ-EL-E HAT2028R-15 |
4 A, 60 V, 0.16 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon N Channel Power MOS FET High Speed Power Switching
|
Analog Devices, Inc.
Renesas Electronics Corporation
|
| HAT1024R-EL-E HAT1024R-15 |
3.5 A, 30 V, 0.34 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics, Corp.
Renesas Electronics Corporation
|
| RJK0348DPA10 RJK0348DPA-00-J0 |
Silicon N Channel Power MOS FET Power Switching
50 A, 30 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK(2), 8 PIN
|
Renesas Electronics Corporation
|
| RJK0358DSP-00-J0 RJK0358DPA RJK0358DPA-00-J0 RJK03 |
38 A, 30 V, 0.0054 ohm, N-CHANNEL, Si, POWER, MOSFET WPAK-8
Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| MIG100J7CSB1W |
MINIATURE POWER RELAY 东芝智能功率模块IGBT的硅频道
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| HAT2054M HAT2053M |
Silicon N Channel Power MOSFET Power Switching
Silicon N Channel Power MOS FET Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| RJK0210DPA RJK0210DPA-00-J53 |
Silicon N Channel Power MOS FET Power Switching
40 A, 25 V, 0.0074 ohm, N-CHANNEL, Si, POWER, MOSFET HALOGEN FREE AND LEAD FREE, WPAK(2), 8 PIN
|
http://
|
| RJK0380DPA-00-J53 RJK0380DPA10 |
45 A, 30 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET HALOGEN FREE AND LEAD FREE, WPAK-8
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
|
Renesas Electronics Corporation
|
| 2SK3211 2SK3211L-E 2SK3211STL-E |
25 A, 200 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
